| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSC084P03NS3 G | Infineon Technologies | MOSFET P-CH 30V 14.9A TDSON-8 | 0 | 1:$1.88000 10:$1.68200 25:$1.48400 100:$1.33540 250:$1.16232 500:$1.03866 1,000:$0.81609 2,500:$0.76663 |
| BSR302N L6327 | Infineon Technologies | MOSFET N-CH 30V 3.7A SC-59 | 0 | 1:$0.64000 10:$0.50900 25:$0.44520 100:$0.38150 250:$0.32948 500:$0.28322 1,000:$0.21964 |
| BSR302N L6327 | Infineon Technologies | MOSFET N-CH 30V 3.7A SC-59 | 0 | 1:$0.64000 10:$0.50900 25:$0.44520 100:$0.38150 250:$0.32948 500:$0.28322 1,000:$0.21964 |
| SPI15N65C3 | Infineon Technologies | MOSFET N-CH 650V 15A TO262-3 | 0 | 500:$2.06902 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 14.9A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 8.4 毫歐 @ 50A，10V |
| Id 時的 Vgs(th)（最大）: | 1.9V @ 105µA |
| 閘電荷(Qg) @ Vgs: | 58nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 4785pF @ 15V |
| 功率 - 最大: | 69W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TDSON-8 |
| 包裝: | 剪切帶 (CT) |