元器件型號 | 廠商 | 描述 | 數量 | 價格 |
---|---|---|---|---|
PSMNR90-30BL,118 | NXP Semiconductors | MOSFET N CH 30V 120A D2PAK | 0 | 1:$2.98000 10:$2.66900 25:$2.40000 100:$2.18260 250:$1.97572 |
PSMNR90-30BL,118 | NXP Semiconductors | MOSFET N CH 30V 120A D2PAK | 0 | 800:$1.55160 1,600:$1.44816 2,400:$1.37575 5,600:$1.32403 20,000:$1.28266 40,000:$1.24128 |
BUK763R1-40B,118 | NXP Semiconductors | MOSFET N-CH 40V 75A D2PAK | 0 | 1:$2.98000 10:$2.66700 25:$2.39800 100:$2.18110 250:$1.97436 |
BUK763R1-40B,118 | NXP Semiconductors | MOSFET N-CH 40V 75A D2PAK | 0 | 1:$2.98000 10:$2.66700 25:$2.39800 100:$2.18110 250:$1.97436 |
類別: | 分離式半導體產品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續漏極(Id) @ 25° C: | 120A |
開態Rds(最大)@ Id, Vgs @ 25° C: | 1 毫歐@ 25A,10V |
Id 時的 Vgs(th)(最大): | 2.2V @ 1mA |
閘電荷(Qg) @ Vgs: | 243nC @ 10V |
輸入電容 (Ciss) @ Vds: | 14850pF @ 15V |
功率 - 最大: | 306W |
安裝類型: | 表面貼裝 |
封裝/外殼: | TO-263-3,D²Pak(2 引線+接片),TO-263AB |
供應商設備封裝: | D2PAK |
包裝: | 剪切帶 (CT) |