| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI4892DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.99900 |
| SI1413DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V SC-70-6 | 0 | 3,000:$0.26245 |
| SI5429DU-T1-GE3 | Vishay Siliconix | MOSF P CH 30V 12A PWR PK | 95 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI5429DU-T1-GE3 | Vishay Siliconix | MOSF P CH 30V 12A PWR PK | 95 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI5429DU-T1-GE3 | Vishay Siliconix | MOSF P CH 30V 12A PWR PK | 0 | 3,000:$0.26100 6,000:$0.24300 15,000:$0.23400 30,000:$0.22500 75,000:$0.22140 150,000:$0.21600 |
| SI8416DB-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 16A MICRO | 0 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI8416DB-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 16A MICRO | 0 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| IRF740ASTRRPBF | Vishay Siliconix | MOSFET N-CH 400V 10A D2PAK | 0 | 800:$0.97965 |
| SI4864DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 8-SOIC | 0 | 2,500:$2.02160 |
| SI4412ADY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.26100 |
| SI4456DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 33A 8-SOIC | 0 | 2,500:$0.96930 |
| SI4410BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.26100 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 1:$0.77000 25:$0.59680 100:$0.52650 250:$0.45632 500:$0.38610 1,000:$0.30713 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 1:$0.77000 25:$0.59680 100:$0.52650 250:$0.45632 500:$0.38610 1,000:$0.30713 |
| SIRA14DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S SO-8 | 0 | 3,000:$0.25448 6,000:$0.23693 15,000:$0.22815 30,000:$0.21938 75,000:$0.21587 150,000:$0.21060 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 8.8A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 12 毫歐 @ 12.4A，10V |
| Id 時的 Vgs(th)（最大）: | 800mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 10.5nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.6W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |