| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SIE848DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$1.14750 6,000:$1.10500 15,000:$1.06250 30,000:$1.04125 75,000:$1.02000 |
| SI3853DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1.6A 6-TSOP | 0 | 3,000:$0.33350 |
| SI3812DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 2A 6-TSOP | 0 | 3,000:$0.33350 |
| SQ4840EY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8SOIC | 0 | 2,500:$1.12455 |
| SI1300BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-3 | 0 | 1:$0.58000 25:$0.38000 100:$0.31200 250:$0.26000 500:$0.21600 1,000:$0.16000 |
| IRLR024TRLPBF | Vishay Siliconix | MOSFET N-CH 60V 14A DPAK | 0 | 3,000:$0.73170 |
| SIE878DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V POLARPAK | 0 | 1:$1.80000 25:$1.39040 100:$1.26180 250:$1.13300 500:$0.97850 1,000:$0.82400 |
| SQD50P06-15L-GE3 | Vishay Siliconix | MOSFET P-CH 60V 50A TO252 | 0 | 2,000:$1.28250 |
| SQD50P04-09L-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V TO252 | 0 | 2,000:$1.28250 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 60A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.6 毫歐 @ 25A，10V |
| Id 時的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 138nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 6100pF @ 15V |
| 功率 - 最大: | 125W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 10-PolarPAK?（L） |
| 供應商設備封裝: | 10-PolarPAK?（L） |
| 包裝: | 帶卷 (TR) |