| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SQ3418EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 8A 6TSOP | 629 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SIHD5N50D-GE3 | Vishay Siliconix | MOSFET N-CH 500V 5.3A TO252 DPK | 0 | 3,000:$0.50148 6,000:$0.47641 15,000:$0.45671 30,000:$0.44417 75,000:$0.42984 |
| SUD17N25-165-E3 | Vishay Siliconix | MOSFET N-CH D-S 250V TO252 | 175 | 1:$1.80000 25:$1.41920 100:$1.27710 250:$1.11156 500:$0.99330 1,000:$0.78045 |
| SQ3418EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 8A 6TSOP | 0 | 3,000:$0.22320 6,000:$0.20880 15,000:$0.19440 30,000:$0.18360 75,000:$0.18000 150,000:$0.17280 |
| SIHU5N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 5.3A TO251 IPAK | 0 | 1:$1.34000 25:$1.06120 100:$0.95500 250:$0.83120 500:$0.74278 1,000:$0.58361 |
| SQ3456BEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 7.8A 6TSOP | 739 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 40V |
| 電流 - 連續漏極(Id) @ 25° C: | 8A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 32 毫歐 @ 5A，10V |
| Id 時的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 11nC @ 20V |
| 輸入電容 (Ciss) @ Vds: | 660pF @ 25V |
| 功率 - 最大: | 5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-74，SOT-457 |
| 供應商設備封裝: | 6-TSOP |
| 包裝: | 剪切帶 (CT) |