| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BUK661R8-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,798 | 1:$2.78000 10:$2.50800 25:$2.24640 100:$2.02000 250:$1.79364 |
| BUK663R5-55C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,777 | 1:$2.78000 10:$2.50800 25:$2.24640 100:$2.02000 250:$1.79364 |
| BUK663R5-55C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,777 | 1:$2.78000 10:$2.50800 25:$2.24640 100:$2.02000 250:$1.79364 |
| BUK663R5-55C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,000 | 800:$1.37570 1,600:$1.26251 2,400:$1.17545 5,600:$1.13191 20,000:$1.08838 40,000:$1.07096 80,000:$1.04484 |
| BUK964R4-40B,118 | NXP Semiconductors | MOSFET N-CH 40V 75A D2PAK | 5,347 | 1:$2.77000 10:$2.50500 25:$2.24400 100:$2.01790 250:$1.79180 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 120A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.9 毫歐 @ 25A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.8V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 168nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 10918pF @ 25V |
| 功率 - 最大: | 263W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D2PAK |
| 包裝: | 剪切帶 (CT) |