| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| PH3230S,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 26,136 | 1:$2.44000 10:$2.20300 25:$1.97360 100:$1.77480 250:$1.57592 500:$1.37700 |
| PH3230S,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 25,500 | 1,500:$1.10900 3,000:$1.03300 7,500:$0.99500 10,500:$0.95600 37,500:$0.94100 75,000:$0.91800 |
| PHB45NQ15T,118 | NXP Semiconductors | MOSFET N-CH 150V 45.1A D2PAK | 3,686 | 1:$2.23000 10:$2.01600 25:$1.80600 100:$1.62400 250:$1.44200 |
| PHB45NQ15T,118 | NXP Semiconductors | MOSFET N-CH 150V 45.1A D2PAK | 3,686 | 1:$2.23000 10:$2.01600 25:$1.80600 100:$1.62400 250:$1.44200 |
| PHB45NQ15T,118 | NXP Semiconductors | MOSFET N-CH 150V 45.1A D2PAK | 3,200 | 800:$1.10600 1,600:$1.01500 2,400:$0.94500 5,600:$0.91000 20,000:$0.87500 40,000:$0.86100 80,000:$0.84000 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 100A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 3.2 毫歐 @ 25A，10V |
| Id 時的 Vgs(th)（最大）: | 3V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 42nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 4100pF @ 10V |
| 功率 - 最大: | 62.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-100，SOT-669，4-LFPAK |
| 供應商設備封裝: | LFPAK，Power-SO8 |
| 包裝: | 剪切帶 (CT) |