| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| NP90N055VDG-E1-AY | Renesas Electronics America | MOSFET N-CH 55V 90A TO-252 | 4,975 | 1:$2.45000 10:$2.10000 25:$1.89000 100:$1.71500 250:$1.54000 500:$1.33000 1,000:$1.12000 |
| NP90N055VDG-E1-AY | Renesas Electronics America | MOSFET N-CH 55V 90A TO-252 | 4,975 | 1:$2.45000 10:$2.10000 25:$1.89000 100:$1.71500 250:$1.54000 500:$1.33000 1,000:$1.12000 |
| NP90N055VDG-E1-AY | Renesas Electronics America | MOSFET N-CH 55V 90A TO-252 | 2,500 | 2,500:$0.94500 5,000:$0.91000 12,500:$0.87500 25,000:$0.85750 62,500:$0.84000 |
| NP90N03VUG-E1-AY | Renesas Electronics America | MOSFET N-CH 30V 90A TO-252 | 2,480 | 1:$2.45000 10:$2.10000 25:$1.89000 100:$1.71500 250:$1.54000 500:$1.33000 1,000:$1.12000 |
| NP90N03VUG-E1-AY | Renesas Electronics America | MOSFET N-CH 30V 90A TO-252 | 2,480 | 1:$2.45000 10:$2.10000 25:$1.89000 100:$1.71500 250:$1.54000 500:$1.33000 1,000:$1.12000 |
| NP90N03VUG-E1-AY | Renesas Electronics America | MOSFET N-CH 30V 90A TO-252 | 0 | 2,500:$0.94500 5,000:$0.91000 12,500:$0.87500 25,000:$0.85750 62,500:$0.84000 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 55V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 90A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 6 毫歐 @ 45A，10V |
| Id 時的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 135nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 6900pF @ 25V |
| 功率 - 最大: | 1.2W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應(yīng)商設(shè)備封裝: | TO-252 |
| 包裝: | Digi-Reel® |