| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| RJK1056DPB-00#J5 | Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | 4,360 | 1:$2.42000 10:$2.07000 25:$1.86320 100:$1.69050 250:$1.51800 500:$1.31100 1,000:$1.10400 |
| RJK1056DPB-00#J5 | Renesas Electronics America | MOSFET N-CH 100V 25A LFPAK | 2,500 | 2,500:$0.93150 5,000:$0.89700 12,500:$0.86250 25,000:$0.84525 62,500:$0.82800 |
| RJK0856DPB-00#J5 | Renesas Electronics America | MOSFET N-CH 80V 35A LFPAK | 4,616 | 1:$2.42000 10:$2.07000 25:$1.86320 100:$1.69050 250:$1.51800 500:$1.31100 1,000:$1.10400 |
| RJK0856DPB-00#J5 | Renesas Electronics America | MOSFET N-CH 80V 35A LFPAK | 4,616 | 1:$2.42000 10:$2.07000 25:$1.86320 100:$1.69050 250:$1.51800 500:$1.31100 1,000:$1.10400 |
| RJK0856DPB-00#J5 | Renesas Electronics America | MOSFET N-CH 80V 35A LFPAK | 2,500 | 2,500:$0.93150 5,000:$0.89700 12,500:$0.86250 25,000:$0.84525 62,500:$0.82800 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續漏極(Id) @ 25° C: | 25A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 14 毫歐 @ 12.5A，10V |
| Id 時的 Vgs(th)（最大）: | - |
| 閘電荷(Qg) @ Vgs: | 41nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 3000pF @ 10V |
| 功率 - 最大: | 65W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-100，SOT-669 |
| 供應商設備封裝: | LFPAK |
| 包裝: | 剪切帶 (CT) |