| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSP250,115 | NXP Semiconductors | MOSFET P-CH 30V 3A SOT223 | 5,000 | 1,000:$0.35200 2,000:$0.31900 5,000:$0.29700 10,000:$0.28600 25,000:$0.27500 50,000:$0.27000 100,000:$0.26400 |
| BSP250,135 | NXP Semiconductors | MOSFET P-CH 30V 3A SOT223 | 0 | 4,000:$0.31900 8,000:$0.29700 12,000:$0.28600 28,000:$0.27500 100,000:$0.26400 |
| BUK663R5-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,787 | 1:$1.64000 10:$1.47700 25:$1.32320 100:$1.18970 250:$1.05636 |
| PSMN017-60YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 5,170 | 1:$0.85000 10:$0.74400 25:$0.65760 100:$0.57300 250:$0.49876 500:$0.42456 |
| PSMN017-60YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 1,500 | 1,500:$0.32976 3,000:$0.29885 7,500:$0.27823 10,500:$0.26793 37,500:$0.25763 75,000:$0.25350 150,000:$0.24732 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 3A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 250 毫歐 @ 1A，10V |
| Id 時的 Vgs(th)（最大）: | 2.8V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 25nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 250pF @ 20V |
| 功率 - 最大: | 1.65W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-261-4，TO-261AA |
| 供應商設備封裝: | SC-73 |
| 包裝: | 帶卷 (TR) |