| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| PSMN5R9-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 78A SOT669 | 1,500 | 1,500:$0.25808 3,000:$0.23389 7,500:$0.21775 10,500:$0.20969 37,500:$0.20163 75,000:$0.19840 150,000:$0.19356 |
| PSMN045-80YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 1,500 | 1,500:$0.25808 3,000:$0.23389 7,500:$0.21775 10,500:$0.20969 37,500:$0.20163 75,000:$0.19840 150,000:$0.19356 |
| PSMN3R7-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 999 | 1:$0.81000 10:$0.71200 25:$0.62920 100:$0.54820 250:$0.47724 500:$0.40624 |
| PSMN3R7-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 999 | 1:$0.81000 10:$0.71200 25:$0.62920 100:$0.54820 250:$0.47724 500:$0.40624 |
| PSMN3R7-30YLC,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 0 | 1,500:$0.31552 3,000:$0.28594 7,500:$0.26622 10,500:$0.25636 37,500:$0.24650 75,000:$0.24256 150,000:$0.23664 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 78A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 6.1 毫歐 @ 20A，10V |
| Id 時的 Vgs(th)（最大）: | 2.15V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 21.3nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1226pF @ 15V |
| 功率 - 最大: | 63W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-100，SOT-669，4-LFPAK |
| 供應商設備封裝: | LFPAK，Power-SO8 |
| 包裝: | 帶卷 (TR) |