| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PSMN039-100YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 1,658 | 1:$0.85000 10:$0.74400 25:$0.65760 100:$0.57300 250:$0.49876 500:$0.42456 |
| PSMN6R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 79A LFPAK | 1,500 | 1,500:$0.27101 |
| PSMN6R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 79A LFPAK | 2,654 | 1:$0.78000 10:$0.67900 25:$0.60040 100:$0.52320 250:$0.45544 500:$0.38770 |
| PSMN5R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 91A LFPAK | 1,500 | 1,500:$0.27101 |
| PSMN5R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 91A LFPAK | 5,639 | 1:$0.78000 10:$0.67900 25:$0.60040 100:$0.52320 250:$0.45544 500:$0.38770 |
| PSMN5R0-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 91A LFPAK | 5,639 | 1:$0.78000 10:$0.67900 25:$0.60040 100:$0.52320 250:$0.45544 500:$0.38770 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 28.1A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 39.5 毫歐 @ 15A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 23nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1847pF @ 50V |
| 功率 - 最大: | 74W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-100，SOT-669，4-LFPAK |
| 供應(yīng)商設(shè)備封裝: | LFPAK，Power-SO8 |
| 包裝: | 剪切帶 (CT) |