| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSH202,215 | NXP Semiconductors | MOSFET P-CH 30V 520MA SOT23 | 9,000 | 3,000:$0.12400 6,000:$0.11600 15,000:$0.10900 30,000:$0.10000 75,000:$0.09600 150,000:$0.09200 |
| BUK6211-75C,118 | NXP Semiconductors | MOSFET N-CH TRENCH DPAK | 2,500 | 2,500:$0.69100 5,000:$0.65600 12,500:$0.63200 25,000:$0.61200 62,500:$0.59200 |
| BSP100,135 | NXP Semiconductors | MOSFET N-CH 30V 3.2A SOT223 | 2,157 | 1:$0.69000 10:$0.58100 25:$0.50920 100:$0.43570 250:$0.37788 500:$0.32008 1,000:$0.24675 |
| PMF290XN,115 | NXP Semiconductors | MOSFET N-CH 20V 1A SOT323 | 20,092 | 1:$0.48000 10:$0.37400 25:$0.31560 100:$0.25700 250:$0.21288 500:$0.17586 1,000:$0.13172 |
| PMF370XN,115 | NXP Semiconductors | MOSFET N-CH 30V 870MA SOT-323 | 9,000 | 3,000:$0.09398 6,000:$0.08829 |
| PMF370XN,115 | NXP Semiconductors | MOSFET N-CH 30V 870MA SOT323 | 42,000 | 3,000:$0.11700 6,000:$0.11000 15,000:$0.10300 30,000:$0.09500 75,000:$0.09100 150,000:$0.08800 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 520mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 900 毫歐 @ 280mA，10V |
| Id 時的 Vgs(th)（最大）: | 1.9V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 2.9nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 80pF @ 24V |
| 功率 - 最大: | 417mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | TO-236AB |
| 包裝: | 帶卷 (TR) |