| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BST82,215 | NXP Semiconductors | MOSFET N-CH 100V 190MA SOT-23 | 10,419 | 1:$0.56000 10:$0.39700 25:$0.32600 100:$0.26050 250:$0.18976 500:$0.15410 1,000:$0.11845 |
| PSMN5R5-60YS,115 | NXP Semiconductors | MOSFET N-CH 60V 100A LFPAK | 2,719 | 1:$1.52000 10:$1.34400 25:$1.21320 100:$1.06140 250:$0.93084 500:$0.82556 |
| BST82,215 | NXP Semiconductors | MOSFET N-CH 100V 190MA SOT-23 | 10,419 | 1:$0.56000 10:$0.39700 25:$0.32600 100:$0.26050 250:$0.18976 500:$0.15410 1,000:$0.11845 |
| BST82,235 | NXP Semiconductors | MOSFET N-CH 100V 190MA SOT-23 | 0 | 20,000:$0.08900 |
| BST82,215 | NXP Semiconductors | MOSFET N-CH 100V 190MA SOT-23 | 9,000 | 3,000:$0.10400 6,000:$0.09800 15,000:$0.08900 30,000:$0.08300 75,000:$0.07500 150,000:$0.07200 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續漏極(Id) @ 25° C: | 190mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 10 歐姆 @ 150mA，5V |
| Id 時的 Vgs(th)（最大）: | 2V @ 1mA |
| 閘電荷(Qg) @ Vgs: | - |
| 輸入電容 (Ciss) @ Vds: | 40pF @ 10V |
| 功率 - 最大: | 830mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | TO-236AB |
| 包裝: | Digi-Reel® |