| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| PSMN1R2-25YL,115 | NXP Semiconductors | MOSFET N-CH 25V 100A LFPAK | 4,727 | 1:$1.72000 10:$1.54900 25:$1.38720 100:$1.24750 250:$1.10768 500:$0.96786 |
| PSMN1R2-25YL,115 | NXP Semiconductors | MOSFET N-CH 25V 100A LFPAK | 4,500 | 1,500:$0.77967 3,000:$0.72590 7,500:$0.69901 10,500:$0.67212 37,500:$0.66137 75,000:$0.64524 |
| PSMN4R0-25YLC,115 | NXP Semiconductors | MOSFET N-CH 25V 84A LFPAK | 1,383 | 1:$0.70000 10:$0.61100 25:$0.53960 100:$0.47040 250:$0.40948 500:$0.34856 |
| PHB21N06LT,118 | NXP Semiconductors | MOSFET N-CH 55V 19A SOT404 | 4,790 | 1:$1.65000 10:$1.46200 25:$1.32000 100:$1.15490 250:$1.01284 |
| PHB21N06LT,118 | NXP Semiconductors | MOSFET N-CH 55V 19A SOT404 | 4,790 | 1:$1.65000 10:$1.46200 25:$1.32000 100:$1.15490 250:$1.01284 |
| PHB21N06LT,118 | NXP Semiconductors | MOSFET N-CH 55V 19A SOT404 | 4,000 | 800:$0.76078 1,600:$0.68745 2,400:$0.64162 5,600:$0.60954 20,000:$0.58662 40,000:$0.56829 80,000:$0.54996 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續漏極(Id) @ 25° C: | 100A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 1.2 毫歐 @ 15A，10V |
| Id 時的 Vgs(th)（最大）: | 2.15V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 105nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 6380pF @ 12V |
| 功率 - 最大: | 121W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SOT1023，4-LFPAK |
| 供應商設備封裝: | LFPAK，Power-SO8 |
| 包裝: | 剪切帶 (CT) |