| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| 2N7002P,215 | NXP Semiconductors | MOSFET N-CH SGL 60V SOT-23 | 51,388 | 1:$0.14000 10:$0.12700 25:$0.11600 100:$0.08340 250:$0.04916 500:$0.04078 1,000:$0.02781 |
| 2N7002P,215 | NXP Semiconductors | MOSFET N-CH SGL 60V SOT-23 | 42,000 | 3,000:$0.02300 6,000:$0.02100 15,000:$0.01800 30,000:$0.01600 75,000:$0.01400 150,000:$0.01200 |
| BSH103,215 | NXP Semiconductors | MOSFET N-CH 30V 0.85A SOT23 | 24,679 | 1:$0.54000 10:$0.37900 25:$0.31120 100:$0.24870 250:$0.18116 500:$0.14714 1,000:$0.11309 |
| PSMN030-60YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 1,541 | 1:$0.66000 10:$0.58200 25:$0.51440 100:$0.44840 250:$0.39036 500:$0.33228 |
| PSMN013-30MLC,115 | NXP Semiconductors | MOSFET N-CH 30V 39A LFPAK33 | 1,380 | 1:$0.61000 10:$0.51500 25:$0.45120 100:$0.38630 250:$0.33500 500:$0.28376 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續漏極(Id) @ 25° C: | 360mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 1.6 歐姆 @ 500mA，10V |
| Id 時的 Vgs(th)（最大）: | 2.4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 0.8nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 50pF @ 10V |
| 功率 - 最大: | 350mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | TO-236AB |
| 包裝: | 剪切帶 (CT) |