| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| RZY200P01TL | Rohm Semiconductor | MOSFET P-CH 12V 20A TCPT3 | 0 | |
| RZY200P01TL | Rohm Semiconductor | MOSFET P-CH 12V 20A TCPT3 | 5,000 | 2,500:$0.68600 5,000:$0.65170 10,000:$0.62475 25,000:$0.60760 |
| RCD080N25TL | Rohm Semiconductor | MOSFET N-CH 250V 8A SOT-428 | 4,930 | 1:$1.82000 25:$1.44000 100:$1.29600 250:$1.12800 500:$1.00800 1,000:$0.79200 |
| RCD080N25TL | Rohm Semiconductor | MOSFET N-CH 250V 8A SOT-428 | 4,930 | 1:$1.82000 25:$1.44000 100:$1.29600 250:$1.12800 500:$1.00800 1,000:$0.79200 |
| RCD080N25TL | Rohm Semiconductor | MOSFET N-CH 250V 8A SOT-428 | 2,500 | 2,500:$0.67200 5,000:$0.63840 10,000:$0.61200 25,000:$0.59520 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 20A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | - |
| Id 時(shí)的 Vgs(th)（最大）: | - |
| 閘電荷(Qg) @ Vgs: | - |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 20W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應(yīng)商設(shè)備封裝: | CPT3 |
| 包裝: | 剪切帶 (CT) |