| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| DMN3730UFB-7 | Diodes Inc | MOSFET N-CH 30V 750MA DFN | 3,000 | 3,000:$0.23200 6,000:$0.21600 15,000:$0.20800 30,000:$0.20000 75,000:$0.19680 150,000:$0.19200 |
| DMN3730UFB4-7 | Diodes Inc | MOSFET N-CH 30V 750MA DFN | 8,493 | 1:$0.66000 10:$0.57800 25:$0.51040 100:$0.44480 250:$0.38720 500:$0.32960 1,000:$0.26400 |
| DMN3730UFB4-7 | Diodes Inc | MOSFET N-CH 30V 750MA DFN | 8,493 | 1:$0.66000 10:$0.57800 25:$0.51040 100:$0.44480 250:$0.38720 500:$0.32960 1,000:$0.26400 |
| DMN3730UFB4-7 | Diodes Inc | MOSFET N-CH 30V 750MA DFN | 6,000 | 3,000:$0.23200 6,000:$0.21600 15,000:$0.20800 30,000:$0.20000 75,000:$0.19680 150,000:$0.19200 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 750mA |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 460 毫歐 @ 200mA，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 950mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 1.6nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 64.3pF @ 25V |
| 功率 - 最大: | 470mW |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | 3-UFDFN |
| 供應(yīng)商設(shè)備封裝: | 3-DFN |
| 包裝: | 帶卷 (TR) |