| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PHP18NQ11T,127 | NXP Semiconductors | MOSFET N-CH 110V 18A TO220AB | 939 | 1:$1.40000 10:$1.24000 25:$1.12000 100:$0.98000 250:$0.86000 500:$0.76000 1,000:$0.60000 2,500:$0.56000 5,000:$0.53200 |
| PHT6N06T,135 | NXP Semiconductors | MOSFET N-CH 55V 5.5A SOT223 | 12,000 | 4,000:$0.21476 |
| PHT6N06T,135 | NXP Semiconductors | MOSFET N-CH 55V 5.5A SOT223 | 2,716 | 1:$0.75000 10:$0.65700 25:$0.58040 100:$0.50600 250:$0.44044 500:$0.37492 1,000:$0.30030 |
| BUK9Y12-55B,115 | NXP Semiconductors | MOSFET N-CH 55V 61.8A LFPAK | 0 | 1,500:$0.69400 3,000:$0.64800 7,500:$0.61600 10,500:$0.59200 37,500:$0.57400 75,000:$0.55500 |
| PSMN013-100BS,118 | NXP Semiconductors | MOSFET N CH 100V 68A D2PAK | 300 | 1:$1.66000 10:$1.46800 25:$1.32560 100:$1.16000 250:$1.01728 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 110V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 18A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 90 毫歐 @ 9A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 21nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 633pF @ 25V |
| 功率 - 最大: | 79W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-220-3 |
| 供應(yīng)商設(shè)備封裝: | TO-220AB |
| 包裝: | 管件 |