| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| DMN2015UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6E | 5,960 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 5,765 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 5,765 | 1:$0.64000 10:$0.53600 25:$0.46920 100:$0.40170 250:$0.34840 500:$0.29510 1,000:$0.22750 |
| DMN2013UFDE-7 | Diodes Inc | MOSF N CH 20V 10.5A U-DFN2020-6 | 3,000 | 3,000:$0.20150 6,000:$0.18850 15,000:$0.17550 30,000:$0.16640 75,000:$0.16250 150,000:$0.15600 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續漏極(Id) @ 25° C: | 10.5A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 11.6 毫歐 @ 8.5A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1.1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 45.6nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1779pF @ 10V |
| 功率 - 最大: | 660mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-UDFN |
| 供應商設備封裝: | * |
| 包裝: | 剪切帶 (CT) |