| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI4465ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 13.7A 8SOIC | 248 | 1:$2.21000 25:$1.70120 100:$1.54350 250:$1.38600 500:$1.19700 1,000:$1.00800 |
| SIJ420DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 500 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
| SIJ420DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 500 | 1:$2.14000 25:$1.64720 100:$1.49450 250:$1.34200 500:$1.15900 1,000:$0.97600 |
| SI4896DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8SOIC | 504 | 1:$1.77000 25:$1.40120 100:$1.26090 250:$1.09744 500:$0.98070 1,000:$0.77055 |
| SIE864DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 646 | 1:$2.03000 25:$1.56880 100:$1.42350 250:$1.27820 500:$1.10390 1,000:$0.92960 |
| SI4896DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8SOIC | 0 | 2,500:$0.65380 5,000:$0.62111 12,500:$0.59542 25,000:$0.57908 62,500:$0.56040 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 8V |
| 電流 - 連續漏極(Id) @ 25° C: | - |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 9 毫歐 @ 14A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 85nc @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | Digi-Reel® |