| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI4490DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 200V 8-SOIC | 0 | 2,500:$0.76667 |
| SIR800DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 243 | 1:$1.84000 25:$1.42280 100:$1.29120 250:$1.15940 500:$1.00130 1,000:$0.84320 |
| SIR800DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 243 | 1:$1.84000 25:$1.42280 100:$1.29120 250:$1.15940 500:$1.00130 1,000:$0.84320 |
| SIR800DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8-SOIC | 0 | 3,000:$0.71145 6,000:$0.68510 15,000:$0.65875 30,000:$0.64558 75,000:$0.63240 |
| IRF530STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 14A D2PAK | 800 | 1:$1.82000 25:$1.43720 100:$1.29330 250:$1.12564 |
| IRF530STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 14A D2PAK | 800 | 1:$1.82000 25:$1.43720 100:$1.29330 250:$1.12564 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續漏極(Id) @ 25° C: | 2.85A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 80 毫歐 @ 4A，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 42nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.56W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |