| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI1400DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-6 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 5,945 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 5,945 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIE868DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V POLARPAK | 3,000 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 1.6A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 150 毫歐 @ 1.7A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 600mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 4nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 568mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSSOP，SC-88，SOT-363 |
| 供應(yīng)商設(shè)備封裝: | SC-70-6 |
| 包裝: | 帶卷 (TR) |