| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SUD50P04-08-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V DPAK | 10,000 | 2,000:$0.60480 6,000:$0.57456 10,000:$0.55080 50,000:$0.51840 |
| SI5486DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V PPAK CHIPFET | 4,819 | 1:$1.29000 25:$1.02000 100:$0.91800 250:$0.79900 500:$0.71400 1,000:$0.56100 |
| SI4154DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 7,787 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| SI4154DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 7,787 | 1:$1.63000 25:$1.29000 100:$1.16100 250:$1.01052 500:$0.90300 1,000:$0.70950 |
| SI4154DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 7,500 | 2,500:$0.60200 5,000:$0.57190 12,500:$0.54825 25,000:$0.53320 62,500:$0.51600 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 40V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 50A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 8.1 毫歐 @ 22A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 159nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 5380pF @ 20V |
| 功率 - 最大: | 2.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應(yīng)商設(shè)備封裝: | TO-252，（D-Pak） |
| 包裝: | 帶卷 (TR) |