| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI4447DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V 8-SOIC | 0 | 2,500:$0.26100 5,000:$0.24300 12,500:$0.23400 25,000:$0.22500 62,500:$0.22140 125,000:$0.21600 |
| SI4829DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 565 | 1:$0.75000 25:$0.52360 100:$0.44880 250:$0.38760 500:$0.33320 1,000:$0.25840 |
| SI4829DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 565 | 1:$0.75000 25:$0.52360 100:$0.44880 250:$0.38760 500:$0.33320 1,000:$0.25840 |
| SI4829DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 0 | 2,500:$0.21080 5,000:$0.19720 12,500:$0.18360 25,000:$0.17340 62,500:$0.17000 125,000:$0.16320 |
| SI1467DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V SC-70-6 | 688 | 1:$0.75000 25:$0.57800 100:$0.51000 250:$0.44200 500:$0.37400 1,000:$0.29750 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 40V |
| 電流 - 連續漏極(Id) @ 25° C: | 3.3A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 72 毫歐 @ 4.5A，15V |
| Id 時的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 14nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 805pF @ 20V |
| 功率 - 最大: | 1.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |