| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4464DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 200V 8-SOIC | 443 | 1:$1.14000 25:$0.89720 100:$0.80730 250:$0.70264 500:$0.62790 1,000:$0.49335 |
| SI5402BDC-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1206-8 | 255 | 1:$0.74000 25:$0.57120 100:$0.50400 250:$0.43680 500:$0.36960 1,000:$0.29400 |
| SI4464DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 200V 8-SOIC | 0 | 2,500:$0.47867 |
| SI5913DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 1206-8 | 640 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SI5913DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 1206-8 | 640 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SUD45P03-09-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V DPAK | 3,837 | 1:$1.45000 25:$1.14320 100:$1.02870 250:$0.89536 500:$0.80010 1,000:$0.62865 |
| SUD45P03-09-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V DPAK | 2,000 | 2,000:$0.53340 6,000:$0.50673 10,000:$0.48578 50,000:$0.45720 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 1.7A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 240 毫歐 @ 2.2A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 18nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 剪切帶 (CT) |