| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI4156DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 5,184 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| SI4156DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 2,500 | 2,500:$0.37800 5,000:$0.35910 12,500:$0.34425 25,000:$0.33480 62,500:$0.32400 |
| SI3475DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 6-TSOP | 5,347 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| SI3475DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 200V 6-TSOP | 5,347 | 1:$1.03000 25:$0.81000 100:$0.72900 250:$0.63452 500:$0.56700 1,000:$0.44550 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 24A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 6 毫歐 @ 15.7A，10V |
| Id 時的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 42nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1700pF @ 15V |
| 功率 - 最大: | 6W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | 剪切帶 (CT) |