| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SIS414DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 1212-8 PPAK | 3,000 | 3,000:$0.30450 6,000:$0.28350 15,000:$0.27300 30,000:$0.26250 75,000:$0.25830 150,000:$0.25200 |
| SI7619DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1212-8 PPAK | 3,953 | 1:$0.92000 25:$0.71400 100:$0.63000 250:$0.54600 500:$0.46200 1,000:$0.36750 |
| SI7619DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1212-8 PPAK | 3,953 | 1:$0.92000 25:$0.71400 100:$0.63000 250:$0.54600 500:$0.46200 1,000:$0.36750 |
| SIS406DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 PPAK | 6,176 | 1:$0.90000 25:$0.69720 100:$0.61500 250:$0.53300 500:$0.45100 1,000:$0.35875 |
| SIS406DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 PPAK | 6,176 | 1:$0.90000 25:$0.69720 100:$0.61500 250:$0.53300 500:$0.45100 1,000:$0.35875 |
| SIS406DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 PPAK | 3,000 | 3,000:$0.29725 6,000:$0.27675 15,000:$0.26650 30,000:$0.25625 75,000:$0.25215 150,000:$0.24600 |
| SI4487DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 4,529 | 1:$0.88000 25:$0.68000 100:$0.60000 250:$0.52000 500:$0.44000 1,000:$0.35000 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 20A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 16 毫歐 @ 10A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 33nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 795pF @ 15V |
| 功率 - 最大: | 31W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應商設備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |