| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| IPB036N12N3 G | Infineon Technologies | MOSFET N-CH 120V 180A TO263-7 | 2,204 | 1:$7.24000 10:$6.51500 25:$5.91160 100:$5.30840 250:$4.82580 500:$4.22258 |
| IPB320N20N3 G | Infineon Technologies | MOSFET N-CH 200V 34A TO263-3 | 1,852 | 1:$3.33000 10:$3.00100 25:$2.72280 100:$2.44490 250:$2.22260 500:$1.94478 |
| IPB320N20N3 G | Infineon Technologies | MOSFET N-CH 200V 34A TO263-3 | 1,852 | 1:$3.33000 10:$3.00100 25:$2.72280 100:$2.44490 250:$2.22260 500:$1.94478 |
| IPB320N20N3 G | Infineon Technologies | MOSFET N-CH 200V 34A TO263-3 | 0 | 1,000:$1.55582 2,000:$1.47803 5,000:$1.41691 10,000:$1.37801 25,000:$1.33356 |
| SPP80P06P H | Infineon Technologies | MOSFET P-CH 60V 80A TO-220 | 508 | 1:$3.30000 10:$2.95100 25:$2.65560 100:$2.41940 250:$2.18336 500:$1.95914 1,000:$1.65228 2,500:$1.56967 5,000:$1.50476 |
| IPI65R420CFD | Infineon Technologies | MOSFET N-CH 650V 8.7A TO262 | 500 | 1:$3.30000 10:$2.94700 25:$2.65240 100:$2.41670 250:$2.18096 500:$1.95698 1,000:$1.65046 2,500:$1.56794 5,000:$1.50310 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 120V |
| 電流 - 連續漏極(Id) @ 25° C: | 180A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 3.6 毫歐 @ 100A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 270µA |
| 閘電荷(Qg) @ Vgs: | 211nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 13800pF @ 60V |
| 功率 - 最大: | 300W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-7，D²Pak（6 引線+接片），TO-263CB |
| 供應商設備封裝: | PG-TO263-7 |
| 包裝: | Digi-Reel® |