| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSS139 H6327 | Infineon Technologies | MOSFET N-CH 250V 100MA SOT23 | 2,728 | 1:$0.60000 10:$0.48400 25:$0.42320 100:$0.36270 250:$0.31320 500:$0.26926 1,000:$0.20881 |
| BSS139 H6327 | Infineon Technologies | MOSFET N-CH 250V 100MA SOT23 | 0 | 3,000:$0.17035 6,000:$0.15936 15,000:$0.14837 30,000:$0.14012 75,000:$0.13738 150,000:$0.13188 |
| BSV236SP H6327 | Infineon Technologies | MOSFET P-CH 20V 1.5A SOT363 | 5,500 | 1:$0.56000 10:$0.44200 25:$0.36800 100:$0.30230 250:$0.25188 500:$0.20926 1,000:$0.15500 |
| BSV236SP H6327 | Infineon Technologies | MOSFET P-CH 20V 1.5A SOT363 | 5,500 | 1:$0.56000 10:$0.44200 25:$0.36800 100:$0.30230 250:$0.25188 500:$0.20926 1,000:$0.15500 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 耗盡模式 |
| 漏極至源極電壓(Vdss): | 250V |
| 電流 - 連續漏極(Id) @ 25° C: | 100mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 14 歐姆 @ 100µA，10V |
| Id 時的 Vgs(th)（最大）: | 1V @ 56µA |
| 閘電荷(Qg) @ Vgs: | 3.5nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 76pF @ 25V |
| 功率 - 最大: | 360mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | PG-SOT23-3 |
| 包裝: | 剪切帶 (CT) |