| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSS308PE H6327 | Infineon Technologies | MOSFET P-CH 30V 2.0A SOT23 | 11,815 | 1:$0.60000 10:$0.42200 25:$0.34920 100:$0.28150 250:$0.20268 500:$0.16328 1,000:$0.12668 |
| BSS308PE H6327 | Infineon Technologies | MOSFET P-CH 30V 2.0A SOT23 | 9,000 | 3,000:$0.10134 6,000:$0.09571 15,000:$0.08727 30,000:$0.08164 75,000:$0.07319 150,000:$0.07038 |
| BSZ900N20NS3 G | Infineon Technologies | MOSFET N-CH 200V 15.2A 8TSDSON | 9,672 | 1:$2.28000 10:$1.95800 25:$1.76240 100:$1.59910 250:$1.43596 500:$1.24014 1,000:$1.04432 2,500:$0.94642 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 2A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 80 毫歐 @ 2A，10V |
| Id 時的 Vgs(th)（最大）: | 1V @ 11µA |
| 閘電荷(Qg) @ Vgs: | 5nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 500pF @ 15V |
| 功率 - 最大: | 500mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | PG-SOT23-3 |
| 包裝: | 剪切帶 (CT) |