| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSS215P H6327 | Infineon Technologies | MOSFET P-CH 20V 1.5A SOT23 | 6,220 | 1:$0.45000 10:$0.35700 25:$0.29720 100:$0.24410 250:$0.20344 500:$0.16902 1,000:$0.12520 |
| BSS215P H6327 | Infineon Technologies | MOSFET P-CH 20V 1.5A SOT23 | 6,000 | 3,000:$0.10329 6,000:$0.09703 15,000:$0.09077 30,000:$0.08326 75,000:$0.07982 150,000:$0.07669 |
| BSD816SN L6327 | Infineon Technologies | MOSFET N-CH 20V 1.4A SOT363 | 5,953 | 1:$0.54000 10:$0.38300 25:$0.30240 100:$0.22980 250:$0.16276 500:$0.13022 1,000:$0.09958 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續漏極(Id) @ 25° C: | 1.5A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 150 毫歐 @ 1.5A，4.5V |
| Id 時的 Vgs(th)（最大）: | 600mV @ 11µA |
| 閘電荷(Qg) @ Vgs: | 3.6nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 346pF @ 15V |
| 功率 - 最大: | 500mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | PG-SOT23-3 |
| 包裝: | 剪切帶 (CT) |