| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSS316N H6327 | Infineon Technologies | MOSFET N-CH 30V 1.4A SOT23 | 6,000 | 3,000:$0.08900 6,000:$0.08010 15,000:$0.07120 30,000:$0.06675 75,000:$0.05919 150,000:$0.05563 |
| BSS314PE H6327 | Infineon Technologies | MOSFET P-CH 30V 1.5A SOT23 | 5,960 | 1:$0.52000 10:$0.37000 25:$0.30560 100:$0.24650 250:$0.17748 500:$0.14298 1,000:$0.11093 |
| BSS314PE H6327 | Infineon Technologies | MOSFET P-CH 30V 1.5A SOT23 | 5,960 | 1:$0.52000 10:$0.37000 25:$0.30560 100:$0.24650 250:$0.17748 500:$0.14298 1,000:$0.11093 |
| BSS314PE H6327 | Infineon Technologies | MOSFET P-CH 30V 1.5A SOT23 | 3,000 | 3,000:$0.08874 6,000:$0.08381 15,000:$0.07642 30,000:$0.07149 75,000:$0.06409 150,000:$0.06163 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 1.4A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 160 毫歐 @ 1.4A，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 3.7µA |
| 閘電荷(Qg) @ Vgs: | 0.6nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 94pF @ 15V |
| 功率 - 最大: | 500mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | PG-SOT23-3 |
| 包裝: | 帶卷 (TR) |