| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSC16DN25NS3 G | Infineon Technologies | MOSFET N-CH 250V 10.9A 8TDSON | 5,000 | 5,000:$0.86255 10,000:$0.82938 25,000:$0.81279 50,000:$0.79620 |
| IPD65R600E6 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | 4,881 | 1:$2.22000 10:$1.90700 25:$1.71600 100:$1.55700 250:$1.39812 500:$1.20746 1,000:$1.01680 |
| IPD65R600E6 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | 2,500 | 2,500:$0.85792 5,000:$0.82615 12,500:$0.79438 25,000:$0.77849 62,500:$0.76260 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 250V |
| 電流 - 連續漏極(Id) @ 25° C: | 10.9A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 165 毫歐 @ 5.5A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 32µA |
| 閘電荷(Qg) @ Vgs: | 11.4nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 920pF @ 100V |
| 功率 - 最大: | 62.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TDSON-8（5.15x6.15） |
| 包裝: | 帶卷 (TR) |