| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SN7002N H6327 | Infineon Technologies | MOSFET N-CH 60V 200MA SOT23 | 5,790 | 1:$0.57000 10:$0.38800 25:$0.26240 100:$0.18240 250:$0.12996 500:$0.09918 1,000:$0.06840 |
| SN7002N H6327 | Infineon Technologies | MOSFET N-CH 60V 200MA SOT23 | 3,000 | 3,000:$0.05358 6,000:$0.04560 15,000:$0.03876 30,000:$0.03420 75,000:$0.03192 150,000:$0.02907 |
| BSS315P H6327 | Infineon Technologies | MOSFET P-CH 30V 1.5A SOT23 | 2,840 | 1:$0.52000 10:$0.36800 25:$0.30440 100:$0.24550 250:$0.17676 500:$0.14240 1,000:$0.11048 |
| BSS315P H6327 | Infineon Technologies | MOSFET P-CH 30V 1.5A SOT23 | 0 | 3,000:$0.08838 6,000:$0.08347 15,000:$0.07611 30,000:$0.07120 75,000:$0.06383 150,000:$0.06138 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續漏極(Id) @ 25° C: | 200mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 5 歐姆 @ 500mA，10V |
| Id 時的 Vgs(th)（最大）: | 1.8V @ 26µA |
| 閘電荷(Qg) @ Vgs: | 1.5nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 45pF @ 25V |
| 功率 - 最大: | 360mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | PG-SOT23-3 |
| 包裝: | 剪切帶 (CT) |