| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| STL23NM60ND | STMicroelectronics | MOSFET N-CH 600V 19.5A POWERFLAT | 3,000 | 3,000:$4.42000 6,000:$4.25000 15,000:$4.18200 30,000:$4.08000 |
| STF20NM65N | STMicroelectronics | MOSFET N-CH 650V 15A TO-220FP | 925 | 1:$4.37000 10:$3.90000 25:$3.51000 100:$3.19800 250:$2.88600 500:$2.58960 1,000:$2.18400 2,500:$2.07480 5,000:$1.99680 |
| STI24NM60N | STMicroelectronics | MOSFET N-CH 30V 17A I2PAK | 740 | 1:$4.34000 10:$3.87500 25:$3.48760 100:$3.17750 250:$2.86752 500:$2.57300 1,000:$2.17000 2,500:$2.06150 5,000:$1.98400 |
| STP52N25M5 | STMicroelectronics | MOSFET N-CH 250V 28A TO220 | 979 | 1:$4.34000 10:$3.87500 25:$3.48760 100:$3.17750 250:$2.86752 500:$2.57300 1,000:$2.17000 2,500:$2.06150 5,000:$1.98400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 19.5A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 180 毫歐 @ 10A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 70nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2050pF @ 50V |
| 功率 - 最大: | 3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 5-PowerFlat? HV |
| 供應(yīng)商設(shè)備封裝: | 5-PowerFlat? HV（8x8） |
| 包裝: | 帶卷 (TR) |