| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| FDMS86500DC | Fairchild Semiconductor | MOSFET N CH 60V 29A 8-PQFN | 3,000 | 3,000:$1.08000 6,000:$1.04000 15,000:$1.00000 30,000:$0.98400 75,000:$0.96000 |
| FDMS86300DC | Fairchild Semiconductor | MOSFET N CH 80V 24A 8-PQFN | 4,910 | 1:$2.55000 10:$2.30400 25:$2.06400 100:$1.85600 250:$1.64800 500:$1.44000 1,000:$1.19200 |
| FDMS86101DC | Fairchild Semiconductor | MOSFET N-CH 100V 14.5A 8-PQFN | 0 | 3,000:$1.01250 |
| FDD86110 | Fairchild Semiconductor | MOSFET N-CH 100V 12.5A DPAK-3 | 0 | 2,500:$1.01250 |
| FDMS8023S | Fairchild Semiconductor | MOSFET N-CH 30V POWER56 | 3,362 | 1:$2.55000 10:$2.30400 25:$2.06400 100:$1.85600 250:$1.64800 500:$1.44000 1,000:$1.19200 |
| FDMS8023S | Fairchild Semiconductor | MOSFET N-CH 30V POWER56 | 3,362 | 1:$2.55000 10:$2.30400 25:$2.06400 100:$1.85600 250:$1.64800 500:$1.44000 1,000:$1.19200 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續漏極(Id) @ 25° C: | 29A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 2.3 毫歐 @ 29A，10V |
| Id 時的 Vgs(th)（最大）: | 4.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 107nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 7680pF @ 30V |
| 功率 - 最大: | 3.2W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-TDFN 裸露焊盤 |
| 供應商設備封裝: | 8-PQFN（5X6），Power56 |
| 包裝: | 帶卷 (TR) |