| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| DMS3016SSS-13 | Diodes Inc | MOSFET N-CH 30V 9.8A SO8 | 2,500 | 2,500:$0.15500 5,000:$0.14500 12,500:$0.13500 25,000:$0.12800 62,500:$0.12500 125,000:$0.12000 |
| DMN3029LFG-7 | Diodes Inc | MOSFET N-CH 30V 5.3A PWRDI333-8 | 5,730 | 1:$0.49000 10:$0.41200 25:$0.36120 100:$0.30900 250:$0.26800 500:$0.22700 1,000:$0.17500 |
| DMN3029LFG-13 | Diodes Inc | MOSFET N-CH 30V 5.3A PWRDI333-8 | 0 | |
| DMN3029LFG-13 | Diodes Inc | MOSFET N-CH 30V 5.3A PWRDI333-8 | 0 | |
| DMN3029LFG-13 | Diodes Inc | MOSFET N-CH 30V 5.3A PWRDI333-8 | 3,000 | 3,000:$0.15500 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，肖特基，金屬氧化物! |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 9.8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 13 毫歐 @ 9.8A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 43nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1849pF @ 15V |
| 功率 - 最大: | 1.54W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SO |
| 包裝: | 帶卷 (TR) |