| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| PMV60EN,215 | NXP Semiconductors | MOSFET N-CH 30V 4.7A SOT-23 | 12,000 | 3,000:$0.14260 6,000:$0.13570 |
| PMV60EN,215 | NXP Semiconductors | MOSFET N-CH 30V 4.7A SOT-23 | 11,355 | 1:$0.56000 10:$0.47400 25:$0.41520 100:$0.35540 250:$0.30820 500:$0.26106 1,000:$0.20125 |
| PMV60EN,215 | NXP Semiconductors | MOSFET N-CH 30V 4.7A SOT-23 | 11,355 | 1:$0.56000 10:$0.47400 25:$0.41520 100:$0.35540 250:$0.30820 500:$0.26106 1,000:$0.20125 |
| PMV60EN,215 | NXP Semiconductors | MOSFET N-CH 30V 4.7A SOT-23 | 9,000 | 3,000:$0.17800 6,000:$0.16700 15,000:$0.15500 30,000:$0.14700 75,000:$0.14400 150,000:$0.13800 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 4.7A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 55 毫歐 @ 2A，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 9.4nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 350pF @ 30V |
| 功率 - 最大: | 2W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | TO-236AB |
| 包裝: | 帶卷 (TR) |