| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSS127SSN-7 | Diodes Inc | MOSFET N-CH 600V 50MA SC59 | 5,457 | 1:$0.49000 10:$0.34500 25:$0.28360 100:$0.22650 250:$0.16500 500:$0.13400 1,000:$0.10300 |
| BSS127SSN-7 | Diodes Inc | MOSFET N-CH 600V 50MA SC59 | 3,000 | 3,000:$0.09675 6,000:$0.09138 15,000:$0.08331 30,000:$0.07794 75,000:$0.06988 150,000:$0.06719 |
| DMS3016SSS-13 | Diodes Inc | MOSFET N-CH 30V 9.8A SO8 | 3,782 | 1:$0.49000 10:$0.41200 25:$0.36120 100:$0.30900 250:$0.26800 500:$0.22700 1,000:$0.17500 |
| DMN3029LFG-7 | Diodes Inc | MOSFET N-CH 30V 5.3A PWRDI333-8 | 5,730 | 1:$0.49000 10:$0.41200 25:$0.36120 100:$0.30900 250:$0.26800 500:$0.22700 1,000:$0.17500 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續漏極(Id) @ 25° C: | 50mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 160 歐姆 @ 16mA，10V |
| Id 時的 Vgs(th)（最大）: | 4.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 1.08nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 21.8pF @ 25V |
| 功率 - 最大: | 610mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | SC-59 |
| 包裝: | 剪切帶 (CT) |