| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| PMV117EN,215 | NXP Semiconductors | MOSFET N-CH 30V 2.5A SOT23 | 6,000 | 3,000:$0.13000 6,000:$0.12200 15,000:$0.11400 30,000:$0.10400 75,000:$0.10000 150,000:$0.09700 |
| SI2302DS,215 | NXP Semiconductors | MOSFET N-CH 20V 2.5A SOT23 | 11,613 | 1:$0.53000 10:$0.41200 25:$0.34760 100:$0.28340 250:$0.23472 500:$0.19390 1,000:$0.14523 |
| SI2302DS,215 | NXP Semiconductors | MOSFET N-CH 20V 2.5A SOT23 | 9,000 | 3,000:$0.13000 6,000:$0.12200 15,000:$0.11400 30,000:$0.10400 75,000:$0.10000 150,000:$0.09700 |
| SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 7,822 | 1:$0.53000 10:$0.41200 25:$0.34760 100:$0.28340 250:$0.23472 500:$0.19390 1,000:$0.14523 |
| SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 7,822 | 1:$0.53000 10:$0.41200 25:$0.34760 100:$0.28340 250:$0.23472 500:$0.19390 1,000:$0.14523 |
| SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 6,000 | 3,000:$0.13000 6,000:$0.12200 15,000:$0.11400 30,000:$0.10400 75,000:$0.10000 150,000:$0.09700 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 2.5A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 117 毫歐 @ 500mA，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 4.6nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 147pF @ 10V |
| 功率 - 最大: | 830mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | TO-236AB |
| 包裝: | 帶卷 (TR) |