| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSC882N03MS G | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | 9,000 | 1:$1.85000 10:$1.65900 25:$1.46360 100:$1.31710 250:$1.14632 500:$1.02438 1,000:$0.80487 2,500:$0.75609 |
| BSC882N03MS G | Infineon Technologies | MOSFET N-CH 30V 100A TDSON-8 | 0 | 5,000:$0.64877 10,000:$0.62195 25,000:$0.60487 50,000:$0.58536 |
| BSZ0902NSI | Infineon Technologies | MOSFET N-CH 30V 21A TSDSON-8 | 8,394 | 1:$1.82000 10:$1.62900 25:$1.43720 100:$1.29330 250:$1.12564 500:$1.00590 1,000:$0.79035 2,500:$0.74245 |
| BSZ0902NSI | Infineon Technologies | MOSFET N-CH 30V 21A TSDSON-8 | 8,394 | 1:$1.82000 10:$1.62900 25:$1.43720 100:$1.29330 250:$1.12564 500:$1.00590 1,000:$0.79035 2,500:$0.74245 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 34V |
| 電流 - 連續漏極(Id) @ 25° C: | 100A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 2.6 毫歐 @ 30A，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 55nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 4300pF @ 15V |
| 功率 - 最大: | 69W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TDSON-8 |
| 包裝: | 剪切帶 (CT) |