| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSS126 H6906 | Infineon Technologies | MOSFET N-CH 600V 21MA SOT23 | 3,000 | 3,000:$0.23026 6,000:$0.21438 15,000:$0.20644 30,000:$0.19850 75,000:$0.19532 150,000:$0.19056 |
| BSC12DN20NS3 G | Infineon Technologies | MOSFET N-CH 200V 11.3A 8TDSON | 15,294 | 1:$1.83000 10:$1.56700 25:$1.41040 100:$1.27960 250:$1.14908 500:$0.99238 1,000:$0.83568 2,500:$0.75734 |
| BSC12DN20NS3 G | Infineon Technologies | MOSFET N-CH 200V 11.3A 8TDSON | 10,000 | 5,000:$0.67899 10,000:$0.65288 25,000:$0.63982 50,000:$0.62676 |
| BSO201SP H | Infineon Technologies | MOSFET P-CH 20V 12A 8SOIC | 4,220 | 1:$1.87000 10:$1.60400 25:$1.44400 100:$1.31030 250:$1.17656 500:$1.01612 1,000:$0.85568 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 耗盡模式 |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續漏極(Id) @ 25° C: | 21mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 500 歐姆 @ 16mA，10V |
| Id 時的 Vgs(th)（最大）: | 1.6V @ 8µA |
| 閘電荷(Qg) @ Vgs: | 2.1nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 28pF @ 25V |
| 功率 - 最大: | 500mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | PG-SOT23-3 |
| 包裝: | 帶卷 (TR) |