| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BSZ240N12NS3 G | Infineon Technologies | MOSFET N-CH 120V 37A TSDSON-8 | 9,995 | 1:$1.80000 10:$1.54100 25:$1.38680 100:$1.25830 250:$1.12992 500:$0.97584 1,000:$0.82176 2,500:$0.74472 |
| BSZ42DN25NS3 G | Infineon Technologies | MOSFET N-CH 250V 5A TSDSON-8 | 9,980 | 1:$1.56000 10:$1.39800 25:$1.23360 100:$1.11020 250:$0.96632 500:$0.86352 1,000:$0.67848 2,500:$0.63736 |
| IPD530N15N3 G | Infineon Technologies | MOSFET N-CH 150V 21A TO252-3 | 4,495 | 1:$1.79000 10:$1.60400 25:$1.41520 100:$1.27360 250:$1.10848 500:$0.99058 1,000:$0.77831 |
| BSZ42DN25NS3 G | Infineon Technologies | MOSFET N-CH 250V 5A TSDSON-8 | 9,980 | 1:$1.56000 10:$1.39800 25:$1.23360 100:$1.11020 250:$0.96632 500:$0.86352 1,000:$0.67848 2,500:$0.63736 |
| IPD530N15N3 G | Infineon Technologies | MOSFET N-CH 150V 21A TO252-3 | 2,500 | 2,500:$0.66038 5,000:$0.62736 12,500:$0.60142 25,000:$0.58491 62,500:$0.56604 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 120V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 37A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 24 毫歐 @ 20A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 35µA |
| 閘電荷(Qg) @ Vgs: | 27nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1900pF @ 60V |
| 功率 - 最大: | 66W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應(yīng)商設(shè)備封裝: | PG-TSDSON-8（3.3x3.3） |
| 包裝: | 剪切帶 (CT) |