| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| BSC032NE2LS | Infineon Technologies | MOSFET N-CH 25V 22A TDSON-8 | 5,000 | 5,000:$0.53626 10,000:$0.51408 25,000:$0.49997 50,000:$0.48384 |
| IPD088N06N3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 | 2,500 | 2,500:$0.52906 5,000:$0.50261 12,500:$0.48182 25,000:$0.46860 62,500:$0.45348 |
| BSZ0904NSI | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON | 5,000 | 5,000:$0.52735 10,000:$0.50554 25,000:$0.49166 50,000:$0.47580 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 84A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3.2 毫歐 @ 30A，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 16nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1200pF @ 12V |
| 功率 - 最大: | 37W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TDSON-8 |
| 包裝: | 帶卷 (TR) |