| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSC883N03MS G | Infineon Technologies | MOSFET N-CH 30V 98A TDSON-8 | 10,000 | 1:$1.33000 10:$1.18900 25:$1.04960 100:$0.94450 250:$0.82204 500:$0.73458 1,000:$0.57717 2,500:$0.54219 |
| BSC883N03MS G | Infineon Technologies | MOSFET N-CH 30V 98A TDSON-8 | 10,000 | 5,000:$0.46523 10,000:$0.44600 25,000:$0.43375 50,000:$0.41976 |
| BSC883N03LS G | Infineon Technologies | MOSFET N-CH 30V 98A TDSON-8 | 10,000 | 1:$1.33000 10:$1.18900 25:$1.04960 100:$0.94450 250:$0.82204 500:$0.73458 1,000:$0.57717 2,500:$0.54219 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 34V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 98A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3.8 毫歐 @ 30A，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 41nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 3200pF @ 15V |
| 功率 - 最大: | 57W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | PG-TDSON-8 |
| 包裝: | 剪切帶 (CT) |