| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IPB230N06L3 G | Infineon Technologies | MOSFET N-CH 60V 30A TO263-3 | 1,973 | 1:$1.13000 10:$1.01100 25:$0.89200 100:$0.80270 250:$0.69864 500:$0.62434 |
| IPB230N06L3 G | Infineon Technologies | MOSFET N-CH 60V 30A TO263-3 | 1,973 | 1:$1.13000 10:$1.01100 25:$0.89200 100:$0.80270 250:$0.69864 500:$0.62434 |
| IPB230N06L3 G | Infineon Technologies | MOSFET N-CH 60V 30A TO263-3 | 1,000 | 1,000:$0.44595 2,000:$0.41622 5,000:$0.39541 10,000:$0.37906 25,000:$0.36865 50,000:$0.35676 |
| BSC884N03MS G | Infineon Technologies | MOSFET N-CH 30V 85A TDSON-8 | 9,996 | 1:$1.26000 10:$1.13100 25:$0.99800 100:$0.89800 250:$0.78160 500:$0.69846 1,000:$0.54879 2,500:$0.51553 |
| BSC884N03MS G | Infineon Technologies | MOSFET N-CH 30V 85A TDSON-8 | 9,996 | 1:$1.26000 10:$1.13100 25:$0.99800 100:$0.89800 250:$0.78160 500:$0.69846 1,000:$0.54879 2,500:$0.51553 |
| BSC884N03MS G | Infineon Technologies | MOSFET N-CH 30V 85A TDSON-8 | 5,000 | 5,000:$0.44236 10,000:$0.42407 25,000:$0.41242 50,000:$0.39912 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 30A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 23 毫歐 @ 30A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.2V @ 11µA |
| 閘電荷(Qg) @ Vgs: | 10nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 1600pF @ 30V |
| 功率 - 最大: | 36W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | PG-TO263-2 |
| 包裝: | Digi-Reel® |