| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| DMN6040SSD-13 | Diodes Inc | MOSFET N CH 60V 5A SO-8 | 2,500 | 2,500:$0.17438 5,000:$0.16313 12,500:$0.15188 25,000:$0.14400 62,500:$0.14062 125,000:$0.13500 |
| DMN2019UTS-13 | Diodes Inc | MOSFET 2N-CH 20V 5.4A TSSOP-8 | 0 | 1:$0.57000 10:$0.44600 25:$0.37640 100:$0.30690 250:$0.25416 500:$0.20996 1,000:$0.15725 |
| DMN2019UTS-13 | Diodes Inc | MOSFET 2N-CH 20V 5.4A TSSOP-8 | 0 | 1:$0.57000 10:$0.44600 25:$0.37640 100:$0.30690 250:$0.25416 500:$0.20996 1,000:$0.15725 |
| DMN2019UTS-13 | Diodes Inc | MOSFET 2N-CH 20V 5.4A TSSOP-8 | 0 | 2,500:$0.14025 5,000:$0.13175 12,500:$0.12325 25,000:$0.11305 62,500:$0.10880 125,000:$0.10455 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | 2 個 N 溝道（雙） |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續漏極(Id) @ 25° C: | 5A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 40 毫歐 @ 4.5A，10V |
| Id 時的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 22.4nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1287pF @ 25V |
| 功率 - 最大: | 1.3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SO |
| 包裝: | 帶卷 (TR) |