分離式半導(dǎo)體產(chǎn)品 SP8M8FU6TB品牌、價(jià)格、PDF參數(shù)
SP8M8FU6TB • 品牌、價(jià)格
| 元器件型號(hào) |
廠商 |
描述 |
數(shù)量 |
價(jià)格 |
| SP8M8FU6TB |
Rohm Semiconductor |
MOSFET N/P-CH 30V 6A/4.5A 8SOIC |
0 |
2,500:$0.55720
|
| SP8K3FU6TB |
Rohm Semiconductor |
MOSFET N-CH DUAL 30V 7A 8SOIC |
0 |
2,500:$0.60480
|
| SP8M7FU6TB |
Rohm Semiconductor |
MOSFET N/P-CH 30V 5A/7A 8SOIC |
0 |
|
| SP8M5FU6TB |
Rohm Semiconductor |
MOSFET N/P-CH 30V 6A/7A 8SOIC |
0 |
2,500:$0.75735
|
| SP8K24FU6TB |
Rohm Semiconductor |
MOSFET N-CH DUAL 45V 6A 8SOIC |
0 |
2,500:$0.87615
|
| SP8J65TB1 |
Rohm Semiconductor |
MOSFET P-CH DUAL 30V 7A 8SOIC |
0 |
2,500:$0.96255
|
| SP8J5FU6TB |
Rohm Semiconductor |
MOSFET P-CH DUAL 30V 7A 8SOIC |
0 |
2,500:$0.97605
|
| SP8J66TB1 |
Rohm Semiconductor |
MOSFET P-CH DUAL 30V 9A 8SOIC |
0 |
2,500:$1.12320
|
SP8M8FU6TB • PDF參數(shù)
| 類別: |
分離式半導(dǎo)體產(chǎn)品
|
| FET 型: |
N 和 P 溝道
|
| FET 特點(diǎn): |
邏輯電平門
|
| 漏極至源極電壓(Vdss): |
30V
|
| 電流 - 連續(xù)漏極(Id) @ 25° C: |
6A，4.5A
|
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: |
30 毫歐 @ 6A，10V
|
| Id 時(shí)的 Vgs(th)（最大）: |
2.5V @ 1mA
|
| 閘電荷(Qg) @ Vgs: |
10.1nC @ 5V
|
| 輸入電容 (Ciss) @ Vds: |
520pF @ 10V
|
| 功率 - 最大: |
2W
|
| 安裝類型: |
表面貼裝
|
| 封裝/外殼: |
8-SOIC（0.154"，3.90mm 寬）
|
| 供應(yīng)商設(shè)備封裝: |
8-SOICN
|
| 包裝: |
帶卷 (TR)
|