| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI4953ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 11 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SI4953ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 11 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SI4953ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 2,500:$0.31175 5,000:$0.29025 12,500:$0.27950 25,000:$0.26875 62,500:$0.26445 125,000:$0.25800 |
| SI4532ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 8-SOIC | 0 | 2,500:$0.29580 |
| SI9936BDY-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 30V 4.5A 8-SOIC | 0 | 2,500:$0.28710 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | 2 個 P 溝道（雙） |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續漏極(Id) @ 25° C: | 3.7A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 53 毫歐 @ 4.9A，10V |
| Id 時的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 25nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | Digi-Reel® |